Lugar de origem
United States
Número do Modelo
71T75802S200BGGI8
Memory Type
Volatile, Standard18
Technology
SRAM - Synchronous, SDR (ZBT)
Memory Size
18Mb (1M x 18), 18Mb (1M x 18)
Memory Interface
Parallel
Write Cycle Time - Word, Page
Standard
Voltage - Supply
2.375V ~ 2.625V
Operating Temperature
-40°C ~ 85°C (TA), -40°C ~ 85°C (TA)
Frequency - Switching
standard3
Voltage - Supply (Max)
2.625 V
Voltage - Output
standard6
Resistance (Ohms)
Standard19
Voltage - Supply (Min)
2.375 V
Voltage - Breakdown
standard2
Size / Dimension
Standard20
Current - Supply
Standard21
Frequency - Max
Standard16
Current - Output / Channel
Standard17
Current - Output High, Low
Standard22
